2SC2411_0712 [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
| 型号： | 2SC2411_0712 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC2411
FEATURES
z
z
z
z
Power dissipation: PCM=200mW
High ICM(MAX.),I CM(MAX.)=0.5mA.
Low VCE(sat).
Pb
Lead-free
Complements the 2SA1036.
APPLICATIONS
z
NPN Silicon Epitaxial Planar Transistor
SOT-23
ORDERING INFORMATION
Type No.
2SC2411
Marking
CP/CQ/CR
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
32
V
5
V
Collector Current -Continuous
Collector Dissipation
500
200
-55~150
mA
mW
℃
PC
Junction and Storage Temperature
Tj,Tstg
Document number: BL/SSSTC097
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC2411
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
40
32
5
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=100μA,IE=0
IC=1mA,IB=0
IE=100μA,IC=0
VCB=20V,IE=0
VEB=4V,IC=0
V
V
V
1
μA
μA
Emitter cut-off current
IEBO
1
390
0.4
DC current gain
hFE
VCE=3V,IC=100mA
82
Collector-emitter saturation voltage
IC=500mA, IB=50mA
VCE(sat)
V
VCB=10V,IE=0
f=1MHz
Collector output capacitance
Transition frequency
Cob
6.0
pF
VCE=5V, IC= 20mA
f=100MHZ
fT
250
MHz
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
Range
82-180
CP
120-270
CQ
180-390
CR
Marking
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC097
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC2411
Document number: BL/SSSTC097
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC2411
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
G
H
J
0.1Typical
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
2SC2411
3000/Tape&Reel
Document number: BL/SSSTC097
Rev.A
www.galaxycn.com
4
相关型号：
©2020 ICPDF网 联系我们和版权申明